Synthesis of 2D MoS2(1−x)Se2x semiconductor alloy by chemical vapor deposition

Forming B1-xCx Semiconductor Devices By Chemical Vapor Deposition

Forming B1-xCx Semiconductor Layers by Chemical Vapor Deposition

Growth and Characterization of Iii-v Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition By

ii ABSTRACT Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on s...

Chemical Vapor Deposition Synthesis of Novel Indium Oxide Nanostructures in Strongly Reducing Growth Ambient

The current study reports some interesting growth of novel In2O3 nanostructures using ambient-controlled chemical vapor deposition technique in the presence of a strongly reducing hydrazine ambient. The experiments are systematically carried out by keeping either of the carrier gas flow rate or the source temperature constant, and varying the other. For each of the depositions, the growth is st...

Carbon Nanotubes Synthesis by Chemical Vapor Deposition of Methane over Zn – Fe Mixed Catalysts Supported on Alumina

Carbon nanotubes were synthesized over a series of Zn-containing Fe/alumina catalysts by chemical vapor deposition method at two reaction temperatures of 850 and 950 °C using methane as a carbon source. Catalysts were synthesized by keeping Fe concentration constant and varying Zn concentration to study the effects of Zn. The catalysts were characterized using X – ray powder diffraction and N2 ...